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ALD設(shè)備

?適用領(lǐng)域：集成電路、先進(jìn)封裝 Relevant Industries: Integrated Circuits, Advanced Packaging ?適用材料：Si Suitable for Processing: Silicon (Si) ?晶圓尺寸：12/8 英寸 Wafer Size: 12/8 inch ?適用工藝：氮化硅(SiN)、二氧化硅(SiO2)等膜層的沉積 Silicon Nitride (SiN)、 Silicon Dioxide（SiO2）, and other film layers

氧化/擴(kuò)散/退火爐

? 適用領(lǐng)域：集成電路、先進(jìn)封裝、化合物半導(dǎo)體 Relevant Industries: Integrated Circuits, Advanced Packaging, Compound Semiconductors ? 適用材料: ?Si、SiC、GaN Suitable for Processing: Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN) ? 晶圓尺寸：12/8 英寸 Wafer Size: 12/8 inch ? 適用工藝：氧化(Oxidation)、退火(Annealing)、固化(Polyimide)、 合金(Alloy)、擴(kuò)散(Diffusion) Applicable Processes: Oxidation, Annealing, Polyimide Curing, Alloy, Diffusion

LPCVD設(shè)備

適用領(lǐng)域：集成電路、先進(jìn)封裝 Relevant Industries: Integrated Circuits, Advanced Packaging 適用材料: ?Si Suitable for Processing: Silicon (Si) 晶圓尺寸：12/8 英寸 Wafer Size:12/8 inch 適用工藝：氮化硅(SiN)、多晶硅(Poly-Si/U-Poly/D-Poly)、 二氧化硅(TEOS)等 Applicable Processes: Silicon Nitride (SiN) Deposition, Polysilicon(Poly-Si / U-Poly /D-Poly) Deposition, Silicon Dioxide (TEOS) Deposition etc.

LPCVD設(shè)備

?適用領(lǐng)域：集成電路、先進(jìn)封裝 Relevant Industries: Integrated Circuits, Advanced Packaging ?適用材料：Si Suitable for Processing: Silicon (Si) ?晶圓尺寸：12/8 英寸 Wafer Size: 12/8 inch ?適用工藝：氮化硅(SiN)、多晶硅(Poly-Si/U-Poly/D-Poly)、二氧化硅(TEOS)、HTO等 Applicable Processes: Silicon Nitride (SiN) Deposition, Polysilicon (Poly-Si / U-Poly / D-Poly) Deposition, Silicon Dioxide (TEOS) Deposition, HTO, etc.

氧化/擴(kuò)散/退火爐

? 適用領(lǐng)域： ?集成電路、先進(jìn)封裝 Relevant Industries: Integrated Circuits, Advanced Packaging ? 適用材料: ?Si Suitable for Processing: Silicon (Si) ?晶圓尺寸: ?12/8英寸 Wafer Size: 12/8 inch ?適用工藝: ?氧化(Oxidation)、退火(Annealing)、固化(Polyimide)、合金(Alloy)、擴(kuò)散(Diffusion) Applicable Processes: ?Oxidation, Annealing, Polyimide Curing, Alloy, Diffusion

HVPE 法單晶生長(zhǎng)設(shè)備 —臥式

適用領(lǐng)域：?jiǎn)尉L(zhǎng)、外延生長(zhǎng) Relevant Industries: Single Crystal Growth, Epitaxial Growth 適用材料: ?GaN（單晶）、AIN（單晶/外延）、Ga2O3（外延） Suitable for Processing: GaN (single crystal),AlN (single crystal / epitaxial)Ga2O3 (epitaxial) 晶圓尺寸:? 12/8/6 英寸 Wafer Size: 12/8/6? inch

HVPE 法單晶生長(zhǎng)設(shè)備 —立式

適用領(lǐng)域：?jiǎn)尉L(zhǎng)、外延生長(zhǎng) Relevant Industries: Single Crystal Growth, Epitaxial Growth 適用材料: ?GaN（單晶）、AIN（單晶/外延）、Ga2O3（外延） Suitable for Processing: GaN (single crystal),AlN (single crystal / epitaxial)Ga2O3 (epitaxial) 晶圓尺寸:12/ 8/6 英寸 Wafer Size: 12/8/6 inch

PVT法長(zhǎng)晶爐——電阻爐

適用領(lǐng)域：?jiǎn)尉L(zhǎng) Relevant Industries: ?Single Crystal Growth 適用材料: ?SiC、AIN Suitable for Processing: ?SiC (Silicon Carbide), AlN (Aluminum Nitride) 晶圓尺寸: ?12/8 英寸 Wafer Size: 12/8 inch

PVT法長(zhǎng)晶爐——感應(yīng)爐

適用領(lǐng)域：?jiǎn)尉L(zhǎng) Relevant Industries: ?Single Crystal Growth 適用材料: ?Si、AIN Suitable for Processing: ?SiC (Silicon Carbide), AlN (Aluminum Nitride) 晶圓尺寸: ?12/8 英寸 Wafer Size: 12/8 inch